| PART |
Description |
Maker |
| BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diotec Semiconductor AG
Diodes Incorporated
|
| PBG |
Dual Linear Bar Graph, Two Separate Bar Graphs, Continuous but Precisely Controlled Bar Length
|
Vishay
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5G02TU-14 |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H01TU-14 |
Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 1SS388 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
|
Pan Jit International Inc.
|
| 1SS388 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| MA721WS |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| ZUMD54 ZUMD54C |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
ZETEX[Zetex Semiconductors]
|
| 1SS369 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS392 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SCS520DS |
0.1 A, 30 V Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
